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STL7LN65K5AG Datasheet (PDF) - STMicroelectronics
STL7LN65K5AG Datasheet PDF - STMicroelectronics
Part # STL7LN65K5AG
Download  STL7LN65K5AG Download
File Size   588.42 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

STL7LN65K5AG Datasheet (PDF)

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STL7LN65K5AG Datasheet PDF - STMicroelectronics

Part # STL7LN65K5AG
Download  STL7LN65K5AG Click to download

File Size   588.42 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

STL7LN65K5AG Datasheet (HTML) - STMicroelectronics


STL7LN65K5AG Product details

Features
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected

Description
This very high voltage N-channel Power MOSFET is designed using MDmesh
K5 technology based on an innovative proprietary vertical structure. The result is
a dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.

Applications
• Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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