Features
• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched pair transistors in push-pull configuration
• Large positive and negative gate-source voltage range for improved class C
operation
• Optimized for Doherty applications
• Excellent thermal stability, low HCI drift
• In compliance with the European directive 2002/95/EC

Description
The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS
FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency
range. It can be used in class AB, B or C for both CW and pulse applications in
narrow-band operation. It is qualified up to 40 V operation.

Applications
• ISM
• RF energy