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RF2L16080CF2 Datasheet (PDF) - STMicroelectronics

RF2L16080CF2 Datasheet PDF - STMicroelectronics
Part # RF2L16080CF2
Download  RF2L16080CF2 Download
File Size   1923.91 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

RF2L16080CF2 Datasheet (PDF)

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RF2L16080CF2 Datasheet PDF - STMicroelectronics

Part # RF2L16080CF2
Download  RF2L16080CF2 Click to download

File Size   1923.91 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

RF2L16080CF2 Datasheet (HTML) - STMicroelectronics


RF2L16080CF2 Product details

Features
High efficiency and linear gain operations
Integrated ESD protection
Internally input matched for ease of use
Large positive and negative gate-source voltage range for improved class C
operation
Excellent thermal stability, low HCI drift
In compliance with the European Directive 2002/95/EC

Description
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for
global positioning system and communication/ISM applications with frequencies from
1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation
formats.

Applications
• Satellite comms
• Telecom
• ISM




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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