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STK800 Datasheet (PDF) - STMicroelectronics
STK800 Datasheet PDF - STMicroelectronics
Part # STK800
Download  STK800 Download
File Size   243.21 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 30V - 0.006??- 20A - PolarPAK-R STripFET-TM Power MOSFET

STK800 Datasheet (PDF)

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STK800 Datasheet PDF - STMicroelectronics

Part # STK800
Download  STK800 Click to download

File Size   243.21 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 30V - 0.006??- 20A - PolarPAK-R STripFET-TM Power MOSFET

STK800 Datasheet (HTML) - STMicroelectronics


STK800 Product details

Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current.

Features
■ Ultra low top and bottom junction to case thermal resistance
■ Very low capacitances
■ 100% Rg tested
■ Fully encapsulated die
■ 100% Matte tin finish (in compliance with the 2002/95/EC european directive)
■ PolarPAK® is a trademark of VISHAY

Application
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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