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AOB418 Datasheet (PDF) - Alpha & Omega Semiconductors

AOB418 Datasheet PDF - Alpha & Omega Semiconductors
Part # AOB418
Download  AOB418 Download
File Size   113.83 Kbytes
Page   5 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description N-Channel Enhancement Mode Field Effect Transistor

AOB418 Datasheet (PDF)

Go To PDF Page Download Datasheet
AOB418 Datasheet PDF - Alpha & Omega Semiconductors

Part # AOB418
Download  AOB418 Click to download

File Size   113.83 Kbytes
Page   5 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description N-Channel Enhancement Mode Field Effect Transistor

AOB418 Datasheet (HTML) - Alpha & Omega Semiconductors


AOB418 Product details

General Description
The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specifications). AOB418L is a Green Product ordering option. AOv and AOB418L are electrically identical.

Features
    VDS (V) = 30V
    ID = 110A (VGS = 10V)
    RDS(ON) < 6mΩ (VGS = 10V)
    RDS(ON) < 7.2mΩ (VGS = 4.5V)




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About Alpha & Omega Semiconductors


Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs).
The company was founded in 1995 and has its headquarters in San Jose, California.
AOS provides a wide range of power management solutions for applications in consumer electronics, computing, telecommunications, and industrial systems, among others.
The company is known for its cutting-edge technology and innovative products, and it has a strong reputation in the semiconductor industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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