Description
The AT52BC1661A(T) combines a single 16-Mbit Flash and a 8-Mbit PSRAM: both of the devices are offered in a stacked 66-ball CBGA package. The devices operate at 2.7V to 3.3V in the extended temperature range.

Features
• 16-Mbit (x16) Flash and 8-Mbit PSRAM
• 2.7V to 3.3V Operating Voltage
• Low Operating Power
    – 27 mA Operating Current
    – 53 µA Standby Current
• Extended Temperature Range

Flash
• 2.7V to 3.3V Read/Write
• Access Time – 70 ns
• Sector Erase Architecture
    – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
    – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 µs
• Suspend/Resume Feature for Erase and Program
    – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
    – Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
    – 12 mA Active
    – 13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• Top/Bottom Boot Block Configuration
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles

PSRAM
• 8-Mbit (512K x 16)
• 2.7V to 3.3V VCC Operating Voltage
• 70 ns Access Time
• Fully Static Operation and Tri-state Output
• ISB0 < 10 µA when Deep Power-Down