VFT1045 Datasheet(PDF) - Vishay Siliconix

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VFT1045 Datasheet (PDF) - Vishay Siliconix

VFT1045 Datasheet PDF - Vishay Siliconix


Part #	VFT1045

Download	VFT1045 Download

File Size	79.64 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Low Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A

VFT1045 Datasheet (PDF)

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VFT1045 Datasheet PDF - Vishay Siliconix


Part #	VFT1045

Download	VFT1045 Click to download

File Size	79.64 Kbytes

Page	4 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Low Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A

VFT1045 Datasheet (HTML) - Vishay Siliconix

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VFT1045 Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106

Similar Part No. - VFT1045

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Vishay Siliconix	VFT1045BP	84Kb / 4P	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 23-Feb-12
Vishay Siliconix	VFT1045BP	137Kb / 4P	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 19-Mar-18
Inchange Semiconductor ...	VFT1045BP	275Kb / 2P	Schottky Rectifier
Vishay Siliconix	VFT1045BP-M3/4W	84Kb / 4P	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 23-Feb-12
Vishay Siliconix	VFT1045BP	74Kb / 4P	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 23-Oct-13

Similar Description - VFT1045

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V60120C	142Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A 19-May-08
	VBT1080S-M3	90Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 14-May-13
	VBT2080S-M3	95Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A 14-May-13
	VBT3080S-M3	88Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 14-May-13
	VFT3080S-M3	89Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 11-Sep-13
	VT760-E3	141Kb / 6P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 15-Dec-16
	VT3080S-E3	157Kb / 6P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 14-Dec-16
	VE2045C-E3	122Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 20-Dec-13
	VF60120C	77Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A 07-Feb-11
	V35PWM10	123Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A 01-Jun-17

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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