Description
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55NEM216AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM216AFTN is available in a plastic 54-pin thin-small-outline package (TSOP).

Features
■ Low-power dissipation
■ Operating: 15 mW/MHz (typical)
■ Single power supply voltage of 5 V ± 10%
■ Power down features using CE
■ Data retention supply voltage of 2.0 to 5.5 V
■ Direct TTL compatibility for all inputs and outputs
■ Wide operating temperature range of −40° to 85°C
■ Standby Current (maximum): 20 µA