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1N4007 Datasheet, PDF

Search Partnumber : Match&Start with "1N4007" - Total : 425 ( 4/22 Page)

Manufacturer	Part #	Datasheet	Description
Diotech Company.	1N4007	664Kb/2P	GENERAL PURPOSE SILICON RECTIFIER
Gulf Semiconductor	1N4007	102Kb/3P	GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A
Shanghai Shunye Electro...	1N4007	163Kb/2P	GENERAL PURPOSE SILICON RECTIFIER V2.22
WILLAS ELECTRONIC CORP	1N4007	262Kb/2P	VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
EIC discrete Semiconduc...	1N4007	54Kb/2P	SILICON RECTIFIER DIODES
Dc Components	1N4007	427Kb/2P	TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
Pan Jit International I...	1N4007	64Kb/2P	PLASTIC SILICON RECTIFIERS
Fairchild Semiconductor	1N4007	176Kb/3P	General Purpose Rectifiers
Micro Commercial Compon...	1N4007	180Kb/4P	1 Amp Rectifier 50 - 1000 Volts
Surge Components	1N4007	99Kb/2P	1.0 AMP SILICON RECTIFIERS
Diotec Semiconductor	1N4007	96Kb/2P	Silicon Rectifier Diodes ??Silizium-Gleichrichterdioden
Naina Semiconductor ltd...	1N4007	106Kb/2P	General Purpose Rectifier 1.0A
Tiger Electronic Co.,Lt...	1N4007	188Kb/2P	1.0 AMP SILICON RECTIFIERS
Rugao Dachang Electroni...	1N4007	117Kb/2P	General Purpose Plastic Rectifier Reverse Voltage 50 to 1000 V Forward Current 1.0 A
SeCoS Halbleitertechnol...	1N4007	52Kb/2P	VOLTAGE 50 ~ 1000 V 1.0 A, Silicon Rectifiers
New Jersey Semi-Conduct...	1N4007	113Kb/1P	SILICON RECTIFIER
Frontier Electronics.	1N4007	130Kb/2P	1A GENERAL PURPOSE PLASTIC RECTIFIER
Frontier Electronics.	1N4007	62Kb/2P	1A GENERAL PURPOSE PLASTIC RECTIFIER
Won-Top Electronics	1N4007	53Kb/4P	1.0A STANDARD DIODE September, 2012
DAESAN ELECTRONIC CORP.	1N4007	499Kb/2P	STANDARD RECTIFIER

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Brief Description of 1N4007

The 1N4007 is a widely used and readily available diode known as a rectifier diode. It is part of the 1N400x series of rectifier diodes, with each variant in the series having a specific reverse voltage rating. The 1N4007 is the highest voltage-rated diode in the series, with the following key features and specifications:

Voltage Rating: The 1N4007 is rated for a maximum reverse voltage (reverse breakdown voltage) of 1000 volts (1 kV). This makes it suitable for rectifying and blocking relatively high-voltage signals.

Current Rating: The 1N4007 is rated for a maximum average forward current (also known as the continuous forward current) of 1 ampere (1A). This current rating defines the maximum continuous current the diode can handle without overheating.

Package: The 1N4007 is typically available in a DO-41 package, which is a common axial-leaded package for diodes. It features two leads for easy mounting on a circuit board.

Reverse Recovery Time: The 1N4007 has a relatively slow reverse recovery time, typically in the range of microseconds. This means it is not suitable for high-frequency applications.

Forward Voltage Drop: The forward voltage drop of the 1N4007 is typically around 0.7 volts when conducting current in the forward direction. This voltage drop is relatively constant over a range of current levels.

Applications: The 1N4007 diode is primarily used for rectifying alternating current (AC) into direct current (DC) in power supplies, voltage clamping applications, and reverse voltage protection in circuits.

Equivalent for 1N4007

The 1N4007 is a general-purpose silicon rectifier diode with a maximum repetitive reverse voltage of 1000V and an average forward current of 1A. It is commonly used for rectification in power supplies and other electronic circuits. Suitable replacements include the 1N5408, HER208, and FR207.

1N5408:

Maximum repetitive reverse voltage: 1000V
Average forward current: 3A
Larger DO-201AD package for better heat dissipation
HER208:

Maximum repetitive reverse voltage: 1000V
Average forward current: 2A
Fast recovery time, suitable for higher frequency applications
FR207:

Maximum repetitive reverse voltage: 1000V
Average forward current: 2A
Fast recovery time, suitable for higher frequency applications

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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