STW13NB60 / STMicroelectronics - Datasheet(PDF) Chat AI

STW13NB60 Datasheet with Chat AI

Hello, Please ask a question about STW13NB60 Datasheet

# Example questions: ➢ What is the maximum drain current that the stw13nb60 can handle at a case temperature of 100°c?
➢ What is the typical thermal resistance from junction to case (rthj-case) for the stw13nb60?
➢ What is the maximum drain-source voltage (vds) that both the stw13nb60 and sth13nb60fi models can withstand?

Part No.	STW13NB60
Manufacturer	STMICROELECTRONICS
Size	111 Kbytes
Pages	9 pages
Description	N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

Datasheet Summary with AI

️· Storage Temperature: -65 to 150°C
️· Operating Junction Temperature: 150°C

## Electrical Characteristics (Tcase = 25°C)
️· V(BR)DSS (Drain-Source Breakdown Voltage): 600V
️· VGS(th) (Gate Threshold Voltage): 3.45V
️· ID(on) (On State Drain Current): 13A
️· gfs (Forward Transconductance): 8-12 S
️· Q g (Total Gate Charge): 58 nC

## Thermal Data
️· Rthj-case (Thermal Resistance Junction-Case): 0.66°C/W (STW13NB60) / 1.56°C/W (STH13NB60FI)

## Package Options
️· TO-247 ISOWATT218
️· Mechanical dimensions provided in datasheet.

# STW13NB60 / STH13NB60FI Power MOSFET

## Device Overview
️· N-Channel Power MOSFET
️· Designed for high current, high speed switching applications
️· Suitable for SMPS, DC-AC converters, welding equipment, UPS, and motor drives.

## Key Features
️· VDS (Drain-Source Voltage): 600V
️· RDS(on) (Static Drain-Source On Resistance): <0.54Ω
️· ID (Drain Current): 13A (STW13NB60) / 8.6A (STH13NB60FI)
️· Extremely high dv/dt capability
️· 100% Avalanche tested
️· Low intrinsic capacitances
️· Minimized gate charge

## Absolute Maximum Ratings
️· VDrain-Source Voltage (VDS): 600V
️· Drain Current (Tc = 25°C): 13A / 8.6A
️· Ptot (Total Dissipation at Tc = 25°C): 190W / 80W
️· Storage Temperature: -65 to 150°C
️· Operating Junction Temperature: 150°C

## Electrical Characteristics (Tcase = 25°C)
️· V(BR)DSS (Drain-Source Breakdown Voltage): 600V
️· VGS(th) (Gate Threshold Voltage): 3.45V
️· ID(on) (On State Drain Current): 13A
️· gfs (Forward Transconductance): 8-12 S
️· Q g (Total Gate Charge): 58 nC

## Thermal Data
️· Rthj-case (Thermal Resistance Junction-Case): 0.66°C/W (STW13NB60) / 1.56°C/W (STH13NB60FI)

## Package Options
️· TO-247 ISOWATT218
️· Mechanical dimensions provided in datasheet.