# GaAlAs High Power IR LED Emitters - PDI-E808-A

## General Description

· High power GaAlAs infrared emitter
· Packaged in a low-cost T 1¾ plastic package.
· Suitable for photoelectric switches, infrared sources, and automatic controls.

## Absolute Maximum Ratings (TA = 23°C)

· Power Dissipation (Pd): 200 mW
· Continuous Forward Current (If): 100 mA
· Peak Forward Current (Ip): 1 A
· Reverse Voltage (Vr): 5 V
· Storage Temperature (TSTG): -65°C to +125°C
· Operating Temperature (TO): -65°C to +125°C
· Soldering Temperature (TS): +240°C (1/16 inch from case for 3 seconds max)

## Electro-Optical Characteristics (TA = 23°C)

· Radiant Intensity (Po) @ If = 100 mA: 12 - 30 mW/Sr (typical)
· Forward Voltage (Vf) @ If = 100 mA: 1.5 - 2.0 V (typical)
· Reverse Breakdown Voltage (Vr) @ If = 100 μA: 5 - 30 V
· Peak Wavelength (λp) @ If = 50 mA: 880 nm
· Spectral Halfwidth (Δλ) @ If = 50 mA: 70 nm
· Terminal Capacitance (Ct) @ Vr = 0V, f = 1MHz: 20 pF
· Reverse Current (IR) @ Vr = 4V: 10 μA
· Rise Time (tr) @ If = 20 mA: 1.5 μs
· Fall Time (tf) @ If = 20 mA: 0.8 μs

## Package Dimensions (in inches [mm])

· Refer to included diagram (T 1¾ package) including dimensions for beam angle, anode, cathode, and plastic details.



Disclaimer: Specifications are subject to change without notice.