# isc N-Channel MOSFET Transistor STP4NB30FP

## Features
· Drain Current: ID = 4.0A @ TC = 25℃
· Drain Source Voltage: V DSS = 300V (Min)
· Static Drain-Source On-Resistance: RDS(on) = 2.0Ω (Max) @ VGS = 10V

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	300	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	4.0	A
IDM	Drain Current-Single Pulse	16	A
PD	Total Dissipation @ TC=25℃	30	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-65~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	VALUE	UNIT
Rth j-c	Thermal Resistance, Junction to Case	4.17	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0V; ID= 0.25mA	300	--	--	V
IDSS	Zero Gate Voltage Drain Current	VDS=300V; VGS= 0V	--	--	1	μA
IGSS	Gate-Body Leakage Current	VGS= ±30V;VDS= 0V	--	--	±100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 250μA	2.0	--	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 2.5A	--	--	2.0	Ω
VSD	Forward On-Voltage	IS= 4.0A; VGS= 0V	--	--	1.5	V

## Product Disclaimer
· Intended for general electronic equipment
· Not designed for specialized quality/reliability equipment or hazardous/aerospace/medical applications.