# ISF1183 / STP4NB100 N-Channel MOSFET Transistor

## Features

️· Drain Current (ID): 3.8A @ TC=25℃
️· Drain-Source Voltage (VDSS): 1000V (Min)
️· Static Drain-Source On-Resistance (RDS(on)): 4.4Ω (Max) @ VGS=10V

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	1000	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	3.8	A
IDM	Drain Current-Single Pulse	15.2	A
PD	Total Dissipation@TC=25℃	125	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-65~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rthj-c	Thermal Resistance, JunctiontoCase	1	℃/W

## Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0, ID=0.25mA	1000	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=600V,VGS=0V	-	-	1	uA
IGSS	Gate-Body Leakage Current	VGS= ±30V,VDS=0V	-	-	±100	nA
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=0.25mA	3	-	5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V,ID=2A	-	-	4.4	Ω
VSD	Diode Forward Voltage	ISD=3.8A,VGS=0V	-	-	1.6	V

## Disclaimer

️· Product specifications are subject to change without notice.
️· Intended for general electronic equipment.
️· Not designed for use in specialized quality/reliability equipment or hazardous environments.
️· No warranty or guarantee regarding suitability for any particular purpose.
️· Reprinting or copying of datasheet is prohibited without permission.